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  creat by art - low power loss, high efficiency - guardring for overvoltage protection - high surge current capability - ul recognized file # e-326243 - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test v rrm 20 30 40 50 60 90 100 150 v v rms 14 21 28 35 42 63 70 105 v v dc 20 30 40 50 60 90 100 150 v i f(av) a dv/dt v/ s r jc o c/w t j o c t stg o c document number: ds_d1309006 version: h13 - 55 to +150 5 storage temperature range - 55 to +150 note 1: pulse test with pw=300 s, 1% duty cycle voltage rate of change (rated v r ) 10000 typical thermal resistance 5 operating junction temperature range - 55 to +125 v maximum reverse current @ rated v r t j =25 t j =100 t j =125 i r 0.5 0.1 ma 15 10 - - peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 150 a maximum instantaneous forward voltage (note 1) if= 8a v f 0.55 0.70 0.85 0.95 sraf 8150 unit maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified current 8 maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter symbol sraf 820 sraf 830 sraf 840 sraf 850 sraf 860 sraf 890 sraf 8100 mechanical data ito-220ac case: ito-220ac polarity: as marked mounting torque: 5 in-lbs maximum weight: 1.7 g (approximately) sraf820 thru sraf8150 taiwan semiconductor isolated schottk y barrier rectifiers features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec
creat by art part no. part no. sraf860 sraf860 (ta=25 unless otherwise noted) document number: ds_d1309006 version: h13 ratings and characteristics curves sraf860 c0 c0 sraf860 c0g c0 g 50 / tube note 1: "xx" defines voltage from 20v (sraf820) to 150v (sraf8150) example preferred p/n packing code green compound code green compound code package sraf8xx (note 1) c0 suffix "g" ito-220ac packing green compound description sraf820 thru sraf8150 taiwan semiconductor ordering information packing code 0 2 4 6 8 10 0 50 100 150 average forward current (a) case temperature ( o c) fig.1- maximum forward current derating curve sraf850-sraf8150 sraf820-sraf840 resistive or inductiveload with heatsink 25 50 75 100 125 150 175 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2- maximum non-repetitive forward surge current 8.3ms single half sine wave jedec method 0.001 0.01 0.1 1 10 0 20 40 60 80 100 120 140 instantaneous reverse current. (ma) percent of rated peak reverse voltage.(%) fig. 4- typical reverse characteristics tj=25 tj=100 tj=75 0.1 1 10 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 instantaneous forward current (a) forward voltage. (v) fig. 3- typical forward characteristics sraf850-sraf860 sraf820-sraf840 sraf890-8100 sraf8150 pulse width=300 s 1% duty cycle
creat by art min max min max a 4.30 4.70 0.169 0.185 b 2.50 3.10 0.098 0.122 c 2.30 2.90 0.091 0.114 d 0.46 0.76 0.018 0.030 e 6.30 6.90 0.248 0.272 f 9.60 10.30 0.378 0.406 g 3.00 3.40 0.118 0.134 h 0.00 1.60 0.000 0.063 i 0.95 1.45 0.037 0.057 j 0.50 0.90 0.020 0.035 k 2.40 3.20 0.094 0.126 l 14.80 15.50 0.583 0.610 m - 4.10 - 0.161 n - 1.80 - 0.071 o 12.60 13.80 0.496 0.543 p 4.95 5.20 0.195 0.205 p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1309006 version: h13 marking diagram sraf820 thru sraf8150 taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 100 1000 10000 0.1 1 10 100 junction capacitance (pf) reverse voltage (v) fig. 5- typical junction capacitance sraf850-sraf8150 sraf820-sraf840 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance ( /w) t, pilse duration. (sec) fig. 6- typical transient thermal characteristics
creat by art assumes no responsibility or liability for any errors inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1309006 version: h13 sraf820 thru sraf8150 taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,


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